DIFFUSION BARRIERS IN THIN FILMSNICOLET MA.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 3; PP. 415-443; BIBL. 96 REF.Article

ALUMINIUM CONTACT TO NICKEL SILICIDE USING A THIN TUNGSTEN BARRIERBARTUR M; NICOLET MA.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 91; NO 2; PP. 89-98; BIBL. 13 REF.Article

ENERGY STRAGGLING OF ⁴HE IONS BELOW 2.0 MEV IN AL, NI, AND AU.HARRIS JM; NICOLET MA.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 3; PP. 1013-1019; BIBL. 15 REF.Article

THERMAL OXIDATION OF NICKEL DISILICIDEBARTUR M; NICOLET MA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 175-177; BIBL. 23 REF.Article

IMPLANTED OXYGEN IN NISI FORMATIONSCOTT DM; NICOLET MA.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 773-778; ABS. GER; BIBL. 15 REF.Article

INTERACTION OF EVAPORATED PALLADIUM AND TITANIUM FILMS WITH SINGLE-CRYSTAL SILICON = INTERACTION DE COUCHES MINCES EVAPOREES DE PD ET TI AVEC SI MONOCRISTALLINFINSTAD TG; NICOLET MA.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 68; NO 2; PP. 393-405; BIBL. 31 REF.Article

FORMATION OF AU-GE METASTABLE PHASES BY ION MIXING = BILDUNG METASTABILER AU-GE-PHASEN DURCH IONENVERMISCHUNG = FORMATION DE PHASES AU-GE METASTABLES PAR MELANGE D'IONSLIU BX; NICOLET MA.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-04; VOL. 70; NO 2; PP. 671-676; BIBL. 5 REF.Article

ELECTRON AND ION CURRENTS RELEVANT TO ACCURATE CURRENT INTEGRATION IN MEV ION BACKSCATTERING SPECTROMETRYMATTESON S; NICOLET MA.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 160; NO 2; PP. 301-311; BIBL. 25 REF.Article

CURRENT CORRELATION FUNCTION<J(X,T)J(X',T') DERIVED FROM A MODEL BASED ON BROWNIAN MOTION.MATHEWS J; NICOLET MA.1976; AMER. J. PHYS.; U.S.A.; DA. 1976; VOL. 44; NO 5; PP. 448-454; BIBL. 4 REF.Article

SUBSTRATE EFFECTS ON THE VERWEY TRANSITION OF THIN MAGNETITE FILMS.FENG JSY; NICOLET MA.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 9; PP. 835-838; BIBL. 10 REF.Article

THERMAL NOISE CALCULATION OF SINGLE-CARRIER SPACE-CHARGE-LIMITED CURRENT IN A NON-INSULATING SOLIDNICOLET MA; GOLDER J.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 565-572; ABS. ALLEM.; BIBL. 8 REF.Serial Issue

FORMATION OF AU-GE METASTABLE PHASES BY ION MIXINGBAI XIN LIU; NICOLET MA.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 2; PP. 671-676; ABS. FRE; BIBL. 5 REF.Article

INTERDIFFUSION OF THIN BILAYERS OF COPPER AND NICKEL = INTERDIFFUSION DE BICOUCHES MINCES DE CUIVRE ET DE NICKELSUNI I; NICOLET MA; MAEENPAEA M et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 79; NO 1; PP. 69-73; BIBL. 9 REF.Article

ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN FILMS = FORMATION DE SILICIURE INDUITE PAR IONS DANS LES COUCHES MINCES DE NIOBIUMMATTESON S; ROTH J; NICOLET MA et al.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 42; NO 3-4; PP. 217-225; BIBL. 24 REF.Article

REACTION OF THIN METAL FILMS WITH SIO₂ SUBSTRATESPRETORIUS R; HARRIS JM; NICOLET MA et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 667-675; BIBL. 13 REF.Article

THE FORMATION OF NISI FROM NI₂SI STUDIED WITH A PLATINUM MARKERFINSTAD TG; MAYER JW; NICOLET MA et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 391-394; BIBL. 11 REF.Article

MICROANALYSIS OF MATERIALS BY BACKSCATTERING SPECTOMETRY. NEW CAMPAIGNS FOR A VETERAN TECHNIQUENICOLET MA; MAYER JW; MITCHELL IV et al.1972; SCIENCE; U.S.A.; DA. 1972; VOL. 177; NO 4052; PP. 841-849; BIBL. 32 REF.Serial Issue

CONTACT RESISTIVITY OF TIN P⁺-SI AND N⁺-SIFINETTI M; SUNI I; NICOLET MA et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 3; PP. 179-183; BIBL. 9 REF.Article

INVESTIGATION OF THE AU-GE-NI AND AU-GE-PT SYSTEM USED FOR ALLOYED CONTACTS TO GAAS.WITTMER M; FINSTAD T; NICOLET MA et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 935-936; BIBL. 3 REF.Article

KINETICS OF SILICIDE FORMATION BY THIN FILMS OF V ON SI AND SIO₂ SUBSTRATES.KRAUTLE H; NICOLET MA; MAYER JW et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3304-3308; BIBL. 11 REF.Article

THERMAL NOISE MEASUREMENTS ON SPACE-CHARGE-LIMITED HOLE CURRENT IN SILICONGOLDER J; NICOLET MA; SHUMKA A et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 581-585; ABS. FR. ALLEM.; BIBL. 15 REF.Serial Issue

ION INDUCED SILICIDE FORMATION IN NIOBIUM THIN FILMS = FORMATION DE SILICIURE INDUITE PAR IONS DANS DES COUCHES MINCES DE NBMATTESON S; ROTH J; NICOLET MA et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 49; NO 1-3; PP. 157-160; BIBL. 9 REF.Conference Paper

SILICON IMPLANTATION IN GAASTANDON JL; NICOLET MA; EISEN FH et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 165-167; BIBL. 11 REF.Article

THE FIRST PHASE TO NUCLEATE PLANAR TRANSITION METAL-GERMANIUM INTERFACES.WITTMER M; NICOLET MA; MAYER JW et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 42; NO 1; PP. 51-59; BIBL. 3 REF.Article

NOISE IN SINGLE AND DOUBLE INJECTION CURRENTS IN SOLIDS (II).NICOLET MA; BILGER HR; ZIJLSTRA RJJ et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 70; NO 2; PP. 415-438; BIBL. 1 P. 1/2Article